Fully Physical BTI Analysis Tool (BAT) for Modeling of NBTI Architecture, Materials, Process, and Dimension Dependence

The fully physical bias temperature instability (BTI) analysis tool (BAT) is utilized to analyze measured negative bias temperature instability (NBTI) in MOSFETs featuring different architectures, gate insulator processes, channel compositions, and dimensions. Stress and recovery time kinetics are modeled at various DC and AC experimental conditions; the instability is decomposed into several physics-based underlying subcomponents, each of them with characteristic stress and recovery time kinetics. The characteristic features of these subcomponents do not change, but their relative contributions vary, with changes in architecture, fabrication processes, and materials, as well as experimental conditions. The consequential impact on the overall instability is analyzed. The projected instability at the end-of-life (EOL) is determined under different nominal and overclocking usage conditions.