Effects of Size Scaling on Reliability Issues of 3-D Trench Hf 0.5 Zr 0.5 O 2 Capacitor: Polarization Switching Kinetics Analysis and TCAD Simulation

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Authors: Dongping Qiao, Qingxiao Zhu, Yuanquan Huang, Hongye Yuan, Yihao Chen, Chengyan Tian, Zihao Lu, Ji Liu, Tiancheng Gong, Qing Luo
Cited by: 2
References: 19

Abstract

In this work, we present a systematic study of size scaling effects on the reliability issues of Hf0.5Zr0.5O2(HZO) ferroelectric 3-D trench capacitor. First, based on the deep analysis of polarization switching kinetics, we find that with size scaling, the distribution of polarization switching becomes increasingly dispersed. Moreover, by characterizing defect density and simulating electric field profiles, we reveal that the electric field distribution becomes increasingly discrete with size scaling, which is attributed to the unique trench structure. Furthermore, possible solutions to suppress these effects are proposed, which will offer key guidelines for enhancing the reliability of 3-D trench capacitor.

Fields of Study & Subjects

Ferroelectric and Negative Capacitance Devices Advanced Memory and Neural Computing Ferroelectric and Piezoelectric Materials

Publication details

Journal / source
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
73
Issue
5
Pages
2735–2739
Publication date
1 April 2026