High-Performance Tri-Gate GaN MIS-HEMT With a Lanthanum-Doped Hybrid Ferroelectric Charge-Trap Gate-Stack

IEEE Transactions on Electron Devices 2026

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Authors: Rahul Rai, Khanh Quoc Nguyen, J. S. Wu, Baquer Mazhari, Edward Yi Chang

DOI: 10.1109/ted.2026.3678162

Cited by: 1

References: 27

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ferroelectric and Negative Capacitance Devices Ferroelectric and Piezoelectric Materials

References 27