Monolithic Integrated GaN Complementary Logic Circuits Using AlON/Al 2 O 3 Bilayer Gate Dielectric

IEEE Transactions on Electron Devices 2026

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Authors: Xuanming Zhang, Yunsong Xu, Jiachen Duan, Zifeng Qu, Haotian Ji, Chengmurong Ding, Hao Tian, Jiangmin Gu, Ivona Mitrovic, Harm van Zalinge, Sen Huang, Jie Zhang
+2 more Ang Li, Wen Liu
DOI: 10.1109/ted.2026.3683046
Cited by: 1
References: 41

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
73
Issue
6
Pages
3417–3421
Publication date
17 April 2026