Radiation Hardening of InP-Based HEMTs via BCB Passivation: Insights From Gamma Irradiation and Annealing Studies

IEEE Transactions on Electron Devices 2026

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Authors: Y. H. Zhong, Y. Y. Sun, D. H. Zhang, B. Mei, P. Ding, C. Zhang, C.X. Shan
DOI: 10.1109/ted.2026.3685203
Cited by: 1
References: 32

Fields of Study & Subjects

Semiconductor Quantum Structures and Devices Radiation Effects in Electronics Silicon and Solar Cell Technologies

Publication details

Journal / source
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
73
Issue
6
Pages
3435–3441
Publication date
28 April 2026