4.3-kV Fully Vertical β -Ga 2 O 3 Heterojunction Barrier Schottky Diode With Sputtered p-GaN

IEEE Transactions on Electron Devices 2026

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Authors: Qingyuan Chang, Ling Yang, Bin Hou, Mao Jia, Youjun Zhu, Mei Wu, MF Zhang, Qing Zhu, Hao Lu, Xichen Wang, Chunzhou Shi, Jiale Du
+4 more Qian Yu, Mengdi Li, Xiaohua Ma, Yue Hao
DOI: 10.1109/ted.2026.3687817
Cited by: 1
References: 45

Fields of Study & Subjects

Ga2O3 and related materials GaN-based semiconductor devices and materials Thin-Film Transistor Technologies

Publication details

Journal / source
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
73
Issue
6
Pages
3456–3462
Publication date
8 May 2026