Annealing-Driven Strain-Relaxation Transition and Its Direct Impact on Transport in Heteroepitaxial β -Ga₂O₃ MOSFETs

IEEE Transactions on Electron Devices 2026

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Authors: Chunxiao Yu, Y N Wu, Yibo Wang, Bochang Li, Huaixin Wang, Xiang Zheng, Jun Zheng, Xiaoxi Li, Yan Liu, Yue Hao, Genquan Han
DOI: 10.1109/ted.2026.3701688
Cited by: 1
References: 26

Fields of Study & Subjects

Ga2O3 and related materials GaN-based semiconductor devices and materials Semiconductor materials and devices

Publication details

Journal / source
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
73
Issue
8
Pages
5134–5139
Publication date
16 June 2026