A 1.8-kV Normally-Off Al-Rich AlGaN Channel HEMTs Featuring a Recessed Gate and Superlattice Structure

IEEE Transactions on Electron Devices 2026

View at publisher
Authors: Jaejin Heo, Joocheol Jeong, Shyam Mohan, Hyogeun Cho, O. H. Nam, Sakhone Pharkphoumy, Hyun‐Seop Kim
DOI: 10.1109/ted.2026.3708421
Cited by: 1
References: 25

Fields of Study & Subjects

GaN-based semiconductor devices and materials Acoustic Wave Resonator Technologies 2D Materials and Applications

Publication details

Journal / source
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
73
Issue
8
Pages
5288–5292
Publication date
9 July 2026