High-Resolution Atomic Magnetometer-Based Imaging of Integrated Circuits and Batteries

Optically pumped magnetometers (OPMs) have emerged as a powerful technique for high-resolution magnetic field imaging. However, achieving sub-millimeter spatial resolution at sub-picotesla sensitivities (< 1 pT/ √ Hz) remains challenging, particularly under finite-field conditions. We present a high-resolution magnetic imaging system based on a free-induction-decay (FID) OPM integrated with a two-axis scanning micromirror for automated beam steering. The double-pass optical configuration allows millimeter-scale devices under test (DUTs) to be positioned directly behind the vapor cell. This enables a standoff distance of 2.7 mm between the magnetic source and the atomic vapor, improving practical imaging resolution by increasing the amplitude of near-field magnetic signals sampled within the sensitive volume. Spatial resolution is experimentally demonstrated by imaging a custom printed circuit board (PCB) containing antiparallel copper tracks spaced 2 mm apart, with measured field maps in close agreement with Biot–Savart predictions. The OPM achieves an optimal field sensitivity of 0.5 pT/ √ Hz, demonstrating the system’s capability for high-precision magnetic field measurements. The imaging system is further validated by resolving polarity-dependent asymmetries in a bridge rectifier integrated circuit (IC) and tracking current dynamics in a ceramic battery in situ. These results highlight the potential of OPM-based systems for noninvasive diagnostics of electronic circuits and batteries.