The Effect of Magnetization Direction and Stacking of Layers on Charge to Spin Conversion in Graphene on 1T-TaS 2

Spintronic devices require effective control of the electrons’ spins. Using the Rashba-Edelstein effect, one converts charge current to non-equilibrium spin accumulation. The efficiency of the process is determined by the intrinsic properties of the material’s band structure. Graphene-based van der Waals heterostructures prove to be a class of materials with highly tunable properties controlled by their composition and relative twist between the layers. Proximity-induced spin-orbit coupling in graphene due to the charge density wave phase in nearby transition-metal dichalcogenides significantly affects its spin physics and related charge to spin conversion efficiencies. Here we present a comprehensive study of the charge to spin conversion coefficients in the graphene on 1T-TaS2monolayer for different magnetization directions and charge density wave phase in 1T-TaS2.