A Waveform Optimization for an X-Band GaN Dual-Function Radar and Communication Front-End With Notch Filters and NN-DPD
Abstract
We present an X-band dual-function radar–communication (DFRC) front-end with jointly optimized waveform and hardware. Two-notch filters at the T/R-switch antenna port suppress the second- and third-order harmonics, reducing the peak-to-sidelobe ratio (PSLR) by 1.3dB. Implemented in a 250-nm gallium nitride (GaN) high-electron mobility transistor (HEMT) process, the integrated transmitter delivers saturated power of 41.5dBm and peak power added efficiency (PAE) of 31.8% both at 9.5GHz. The receiver provides 35.2-dB gain at 9.5GHz and a minimum noise figure (NF) of 2.04dB at 8.5GHz. To synthesize radar-friendly communication sequences, we propose a hierarchical block-partitioned optimizer (HBPO) with an enhanced fast Fourier transform (FFT) for 16-quadrature amplitude modulation (16-QAM). With a 216-MHz radar band and a 4.567-ms coherent processing interval (CPI), the waveform achieves 0.693-m range resolution and 3.46-m/s velocity resolution at 9.5GHz. Concurrently, a 64-QAM link over 629 MHz attains about 3.53 Gb/s gross bit rate. Measurements show HBPO improves PSLR by 7.5dB on average and reduces search time by up to 29.6%. To linearize the realized GaN front end, neural-network–based digital predistortion (NN-DPD) is employed, which reduces error vector magnitude (EVM) by 9.6dB and improves adjacent channel power ratio (ACPR) by 15.1dB, while the localized discrete Fourier transform-spread-orthogonal frequency division multiplexing (DFT-s-OFDM) improves peak-to-average power ratio (PAPR) by 4.0dB without degrading radar metrics. The demonstrated co-optimization delivers high-resolution sensing and high-fidelity communications on a single compact radio frequency (RF) chain, applicable for 6G DFRC front-ends.
Fields of Study & Subjects
Advanced Power Amplifier Design
PAPR reduction in OFDM
GaN-based semiconductor devices and materials
Publication details
- Journal / source
- IEEE Transactions on Microwave Theory and Techniques
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 74
- Issue
- 3
- Pages
- 2499–2513
- Publication date
- 12 January 2026