Indirect Laser Metal Deposition Unexpectedly Stabilises Amorphous Germanium Memristors

IEEE Transactions on Nanotechnology 2026

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Authors: Zidu Li, Syed Muhammad Raza, Phil David Börner, Martin Manns, P. Haring Bolívar, Bhaskar Choubey
DOI: 10.1109/tnano.2026.3663465
Cited by: 1
References: 20

Abstract

We report an unexpected finding regarding the effects of excessive heat on amorphous germanium (a-Ge)-based memristors. These results came out from experiments conducted to identify semiconductor sensors which can withstand an indirect laser metal deposition process, particularly when embedded beneath a metallic surface exposed to the high temperatures. Surprisingly, we observed that this process can unexpectedly stabilise the switching behaviour of amorphous germanium memristors. This may result from partial crystallisation in the active layer of the memristor, which could enhance their stability.

Fields of Study & Subjects

Advanced Memory and Neural Computing Ferroelectric and Negative Capacitance Devices Thin-Film Transistor Technologies

Publication details

Journal / source
IEEE Transactions on Nanotechnology
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
25
Pages
49–52
Publication date
1 January 2026