Graphene Monolayer Treated With UV Irradiation for Large Area Graphene Field-Effect Transistors by Electron Beam Lithography

Graphene, as one of the most attractive nanomaterials, is considered for applications in beyond CMOS nanoelectronics. The realization of high-performance field effect devices is a key step in the race towards beyond CMOS technologies. In this work, the fabrication and characterization of long-channel bottom-gate MOSFET devices with Graphene channel are presented. Two fabrication optimization approaches are demonstrated. The first is related to the removal of polymer residues from the transferred CVD single-layer Graphene, while the second focuses on the electron beam lithography step of the Graphene monolayer. Afterwards, the optical and electrical characterization results are combined, in order to estimate the carrier densities in the monolayer. According to our comprehensive analyses of DC electrical measurements, different types of SPICE models are developed to simulate and explain the fabricated devices. A new methodology that exploits the Non-Equilibrium Green's Function method (NEGF) for large-scale SPICE simulations is proposed. The presented models are compared and benchmarked in terms of accuracy, providing robust circuit design tools for the further development of Graphene-based circuits.