Neutron-Induced Single-Event Effects in 3-D Managed NAND Memories

IEEE Transactions on Nuclear Science 2026

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Authors: D. Peyronel, G. Lama, M. Valla, Maria Kastriotou, Carlo Cazzaniga, M. Bagatin, S. Gerardin
DOI: 10.1109/tns.2026.3650913
Cited by: 0

Abstract

The sensitivity of 3D managed NAND Flash memories to single event effects induced by wide-energy spectrum neutrons has been investigated. The analysis considers both the multi-chip architecture and the role of memory management data structures in shaping the device soft error rate. Experimental irradiation results are presented, highlighting the different failure modes observed, with particular emphasis on single-event functional interrupts and user data corruption. In-situ and post-exposure analysis show that most of the issues arise from the underlying raw Flash NAND, whereas, thanks to the implemented mitigation strategies, the other components do not impact significantly.

Fields of Study & Subjects

Radiation Effects in Electronics Advanced Data Storage Technologies Distributed systems and fault tolerance

Publication details

Journal / source
IEEE Transactions on Nuclear Science
Volume
73
Issue
4
Pages
820–825
Publication date
5 January 2026
Language
EN