Single-Event Transient Pulse Widths at 7-, 5-, and 3-nm Bulk FinFET Nodes

Jenna B. Kronenberg; Yoni Xiong; Nicholas J. Pieper; Dennis R. Ball; Bharat L. Bhuva

doi:10.1109/tns.2026.3660219

Single-Event Transient Pulse Widths at 7-, 5-, and 3-nm Bulk FinFET Nodes

IEEE Transactions on Nuclear Science 2026

View at publisher

Authors: Jenna B. Kronenberg, Yoni Xiong, Nicholas J. Pieper, Dennis R. Ball, Bharat L. Bhuva

DOI: 10.1109/tns.2026.3660219

Cited by: 1

References: 23

Abstract

Single-event transient (SET) pulses in 3-, 5-, and 7-nm combinational logic circuits and corresponding single-event cross-sections were obtained using SET filter circuits. Results show increased SET pulse-width with transistor scaling. This work characterizes SET pulse widths as a function of supply voltage, particle LET, temperature, and technology.

Fields of Study & Subjects

Radiation Effects in Electronics Low-power high-performance VLSI design Interconnection Networks and Systems

Publication details

Journal / source: IEEE Transactions on Nuclear Science
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Volume: 73
Issue: 8
Pages: 2746–2751
Publication date: 2 February 2026

References 23