Single-Event Burnout Effect of Split-Gate-Trench MOSFET in Different Ion Angles

For high-frequency and low-signal-loss circuits in space environments, the application demand and range of Split-Gate-Trench MOSFET (SGTMOSFET) are increasing. However, these devices are susceptible to heavy ion irradiation at different angles through experiments, resulting in catastrophic Single-Event Burnout (SEB) failure in the heavy ion experiment on the 130 V N-channel SGTMOSFET. This study utilized TCAD software to simulate the SEB failure phenomenon in the experiment, investigating its mechanism and predicting failure behaviors at various angles. The results showed that the unique split-gate structure of SGTMOSFET changed the electric field distribution within the device. When heavy ions were incident at specific angles, the changes in carrier concentration caused by the electric field accelerate the occurrence of SEB failure. The influence on Single-Event Gate Rupture (SEGR) was also discussed. Moreover, the simulation results indicated that the trench depth significantly affected the SEB ion incidence angle effect of SGTMOSFET. These findings prompted researchers to pay more attention to the SEB ion angle effect and help formulate angle-related enhanced design strategies, thereby improving the stability of SGTMOSFET in the space environment.