Temperature Effect on Single Event Burnout and Leakage Current in SiC Power MOSFETs
Abstract
The effect of temperature on the heavy-ion response of SiC power MOSFETs is investigated. Single event burnout (SEB) and leakage current degradation are studied by using four different ions with linear energy transfer (LET) ranging from 1.52MeVcm2mg−1to 25.7MeVcm2mg−1at 298K and 373 K. The SEB voltage threshold increases with all LETs used under elevated temperature, and the ion-induced leakage current degradation decreases with increasing temperature. Breakdown voltages (VBD) are measured at temperatures from 278K to 388 K. The role of breakdown voltage and impact ionization and their temperature dependence in heavy-ion-induced failure are discussed.
Fields of Study & Subjects
Radiation Effects in Electronics
Silicon Carbide Semiconductor Technologies
Semiconductor materials and devices
Publication details
- Journal / source
- IEEE Transactions on Nuclear Science
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 73
- Issue
- 4
- Pages
- 1183–1188
- Publication date
- 18 February 2026
- Language
- EN