Effects of Yttrium Doping (0–20 at%) on the Scintillation Performance of BaF 2 Crystals

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Authors: Jiawei Xu, Xiang Li, Jing Zhang, Mingxue Deng, Xuejun Qi, Junfeng Chen
Cited by: 1
References: 27

Abstract

Barium fluoride (BaF2) crystal is an ultrafast scintillator known for a sub-nanosecond fast component. Recent studies have shown that yttrium (Y) doping effectively suppresses the slow scintillation component. In this study, we comprehensively investigate the impact of Y doping by growing BaF2crystals with nominal Y concentrations in the range of 0 to 20 at%. The actual Y concentration in BaF2:Y crystal samples was determined by inductively coupled plasma atomic emission spectroscopy (ICP-AES), and the optical transmittance (OT), radioluminescence (RL), fast/slow component ratio (F/S) of light output (LO), energy resolution (ER), and decay time (DT) were systematically measured. It was found that Y doping influences not only the LO and F/S but also the DT of BaF2crystals. As the doping concentration increased from 0% to 20 at%, the LO intensity of the slow component decreased to 6% of that of undoped crystal, while that of the fast component reduced to 60% of undoped crystal. Consequently, the F/S increased from 0.13 to 1.36, whereas ER@511keV degraded from 12.1% to 38.7%. The LOs of slow and fast components showed distinct trends: the slow component decreased rapidly below 1 at% Y and then decayed with an offset-exponential trend, while the fast component remained up to 2 at% before declining linearly. The slow component in Y-doped BaF2crystals consists of two distinct decay processes: the slower one that decreases from 755 ns to 381 ns, and the faster one that declines from 199 ns to 41 ns upon doping with Y.

Fields of Study & Subjects

Radiation Detection and Scintillator Technologies Luminescence Properties of Advanced Materials Neutrino Physics Research

Publication details

Journal / source
IEEE Transactions on Nuclear Science
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
73
Issue
4
Pages
1571–1578
Publication date
24 February 2026