A Mathematical Model to Identify the Occurrence of Stuck Bits in Radiation-Ground Test

IEEE Transactions on Nuclear Science 2026

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Authors: Francisco J. Franco, Mohammadreza Rezaei, Juan Carlos Fabero, Hortensia Mecha, A. Colangeli, Juan Antonio Clemente
DOI: 10.1109/tns.2026.3672649
Cited by: 0
References: 33

Abstract

This manuscript presents a mathematical model to estimate the expected number of flipped cells that appear in two different rounds of reading in radiation tests exclusively related to single-event upsets in memories and that the occurrences must be attributed to randomness. This model only requires the number of bitflips per round and the size of the memory, and it is independent of the multiplicity of the upsets. Deviations from the theoretical predictions of the model are clues to determine if there are persistent errors in the memory, such as stuck bits. The model is validated by means of Monte Carlo calculations and with data from actual radiation experiments.

Fields of Study & Subjects

Radiation Effects in Electronics Particle Detector Development and Performance Integrated Circuits and Semiconductor Failure Analysis

Publication details

Journal / source
IEEE Transactions on Nuclear Science
Volume
73
Issue
8
Pages
3026–3032
Publication date
10 March 2026
Language
EN