Damage Mechanism of 1.335 GeV Ta Ion Irradiation on High-Frequency GaN Schottky Barrier Diodes

IEEE Transactions on Nuclear Science 2026

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Authors: Yan Ren, Honghui Liu, Xubo Song, 顾国栋, Yuanjie Lv, Zhihong Feng, Yinle Li, Chao Pang, Yongtao Yu, Cheng Gao, Shengze Zhou, Yiqiang Ni
DOI: 10.1109/tns.2026.3689064
Cited by: 1
References: 44

Fields of Study & Subjects

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices Semiconductor materials and interfaces

Publication details

Journal / source
IEEE Transactions on Nuclear Science
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
73
Issue
5
Pages
1932–1938
Publication date
30 April 2026