Heavy Ion Induced Single Event Effects in 6.5 and 10 kV SiC Power MOSFETs and Correlation to the SELC and SEB Depletion Capacitance Energy Models

IEEE Transactions on Nuclear Science 2026 Open access

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Authors: Sajal Islam, Arijit Sengupta, D.R. Ball, Jason M. Osheroff, Andrew L. Sternberg, Kenneth F. Galloway, Arthur F. Witulski, Steven L. Kosier, Ronald D. Schrimpf
DOI: 10.1109/tns.2026.3714726
Cited by: 1
References: 33

Fields of Study & Subjects

Radiation Effects in Electronics Silicon Carbide Semiconductor Technologies Electrostatic Discharge in Electronics

Publication details

Journal / source
IEEE Transactions on Nuclear Science
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
73
Issue
8
Pages
2897–2905
Publication date
17 July 2026