Visual Detection of Typical Process Defects in Power Modules and Intelligent Quality Assessment via Electroluminescence Imaging

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Authors: Kai Wang, Ming Ren, Qinyu Zhou, Chongxing Zhang, Ming Dong
Cited by: 0
References: 27

Abstract

Power electronic systems demand high reliability, yet process defects within direct bonded copper (DBC) substrates significantly compromise insulation integrity under coupled electro-thermal stress. This paper introduces a novel visual intelligent detection method based on the electroluminescence (EL) effect that employs a “working condition separation strategy” to quantitatively assess this risk. First, the electric field distribution is mapped under no-load/room temperature conditions to identify static stress concentrations caused by geometric features and defects. Subsequently, the surface temperature distribution is characterized under a representative operational load (0.8 kV DC bus, 100 Ω load resistance), where our EL-based thermometry model achieves a Mean Absolute Error (MAE) of approximately ±3.2°C, with peak module temperatures reaching 90°C. By integrating these distinct electro-thermal datasets, a fuzzy logic-based model generates a quantitative, 2D insulation risk map. Experimental validation on a commercial 1.2 kV/600 A Insulated-Gate Bipolar Transistor (IGBT) module demonstrates the framework's efficacy. The results precisely identify and differentiate high-risk locations, such as a 63% probability of insulation weakness at sharp corners versus a 23% probability along straight trace edges, and quantify their combined stress state. This visual, spatially resolved approach offers a powerful tool for refined quality control, in-depth reliability analysis, and design validation for power modules.

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Power Transformer Diagnostics and Insulation Electrical Fault Detection and Protection

Publication details

Journal / source
IEEE Transactions on Power Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
41
Issue
6
Pages
8887–8898
Publication date
1 January 2026