Evolutionary Analysis of Crosstalk in Silicon Carbide MOSFETs for Gate Switching Applications

In power applications of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs), crosstalk poses a significant challenge that undermines reliability within bridge topologies. Positive crosstalk can inadvertently turn on the device, increasing the risk of short circuits. Conversely, negative crosstalk may lead to reverse breakdown of the gate. SiC MOSFETs often exhibit a degradation phenomenon known as Gate Switching Instability (GSI) under gate switching stress. The lack of evaluations regarding the evolution of crosstalk during GSI raises concerns about effectively managing crosstalk throughout the device's operational lifespan. Unlike previous isolated studies on parameter drift, this study conducts an evolutionary analysis of crosstalk under gate switching stress. The results show that after prolonged gate switching stress, the amplitude of the positive crosstalk voltage decreases, as does the amplitude of the shoot-through current, whereas the amplitude of the negative crosstalk voltage increases. A series of tests and analyses of degradation parameters elucidate the underlying factors, providing insights into the assessment and enhancement of the reliability of SiC MOSFETs in practical applications.