Comparative Study on High Threshold Voltage and Large Gate Swing Technologies of p-GaN Gate HEMT: Structural Scheme versus Circuit Scheme

IEEE Transactions on Power Electronics 2026

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Authors: Yanfeng Ma, Sheng Li, Songwei Peng, Fengxing Ji, Hao Yan, Weihao Lu, Mingfei Li, Tinggang Zhu, Yiheng Li, Leke Wu, Jie Ma, Ran Ye
+4 more Jiaxing Wei, Long Zhang, Siyang Liu, Weifeng Sun
DOI: 10.1109/tpel.2026.3662351
Cited by: 1
References: 35

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ga2O3 and related materials Silicon Carbide Semiconductor Technologies

Publication details

Journal / source
IEEE Transactions on Power Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Pages
1–10
Publication date
1 January 2026