A Novel Ultrahigh Current Whole-Wafer Press-Pack Power Semiconductor With Δ-Pack Structure

Benefiting from simpler, more reliable, and higher power density packaging, Press-pack (PP) power semiconductors are gradually becoming the mainstream choice for high-power power electronic conversion, and have been widely applied in scenarios such as high-voltage direct current transmission, large scale industrial variable frequency drives, and shipboard/railway traction systems. To meet the future demand for larger-capacity power conversion, the voltage and current of semiconductor chips have physical limitations, making it difficult to further improve the device power. Based on the principle of parallel thermal resistance, 4-layer structure and novel Copper-Diamond electrode material, this paper proposes a novel Δ-pack PP-device with ultra-high current. The effectiveness of proposed method has been verified through calculations and experiments, the thermal resistance of the press-pack integrated gate-commutated thyristor (PP-IGCT) device is reduced from 4.6 K/kW to 1.7 K/kW, and the current is increased by more than 88% from 2.76 kA to 5.2 kA.