Achieving 40 kA Turn-Off With a 3 kA IGBT: Failure Analysis Under Extended Gate-Voltage Range in Single-Pulse Operation
Abstract
This paper analyses the failure modes of IGBTs under extreme surge current stress in hybrid DC circuit breaker (HCB) applications and systematically examines their operating limits across an extended gate voltage range (from nominal levels to extreme over-drive). Chip experiments and simulations reveal an evolution of failure mechanisms: as the gate voltage increases, the dominant failure mode transitions from on-state desaturation to blocking-state thermal breakdown. Specifically, a distinct inflection point is identified around 25 V. Based on this result, the safe operating current boundary of IGBTs is redefined. Guided by the revised operational limit, the achievement of a 40.8 kA current interruption is successfully demonstrated.
Fields of Study & Subjects
HVDC Systems and Fault Protection
Silicon Carbide Semiconductor Technologies
Vacuum and Plasma Arcs
Publication details
- Journal / source
- IEEE Transactions on Power Electronics
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 41
- Issue
- 8
- Pages
- 13773–13784
- Publication date
- 18 March 2026