A GaN-Based Buck Converter Resilient to Battery Voltage Fluctuations With 96.3% Peak Efficiency

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Authors: Chi-Yu Chen, Po-Jui Chiu, Y S Huang, XC Wu, Chien-Wei Cho, Sheng-Hsi Hung, Ke‐Horng Chen, Xi Zhu, Ying-Hsi Lin, Tsung-Yen Tsai, Shian-Ru Lin, Hann-Huei Tsai
Cited by: 1
References: 20

Abstract

The voltage fluctuations of 48 V batteries in electric vehicles challenge the robustness of switching converters by disturbing the output voltage during cold-crank and load-dump events. To address this issue, this paper presents a 48 V-to-12 V buck converter employing gallium nitride (GaN) devices to enable high switching frequency (FSW) operation and feedforward control, thereby enhancing line transient performance and stabilizing loop dynamics. However, higher FSW also increases the slew rate at the switching node, imposing stricter noise immunity requirements on circuit operation. To overcome this limitation, a noise-immune sub-nanosecond level shifter (NSLS) is introduced to ensure fast and reliable signal transmission for high-speed operation. In addition, a Miller plateau leakage elimination (MLE) technique mitigates unintended gate coupling induced by high dV/dt, effectively reducing leakage losses. Beyond high-frequency operation, an adaptive P-type ramp generator (APR) facilitates feedforward control by emulating a P-type current mirror, eliminating input-voltage dependency in the control loop. Fabricated using a 0.5-μm GaN process, the proposed converter achieves a peak efficiency of 96.3% while significantly improving transient performance under input-voltage variations.

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Advanced DC-DC Converters

Publication details

Journal / source
IEEE Transactions on Power Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
41
Issue
11
Pages
19055–19065
Publication date
12 June 2026