Comparative Investigation on Device-Level Failure of Three Typical SiC MOSFETs Under Single Surge Current Stress

IEEE Transactions on Power Electronics 2026

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Authors: Liang He, Mowen Zhang, Chao Li, Hao Niu, Y Shi, Xinghuan Chen, Shuanzhu Fang, Zi Wang, Yuan Chen
DOI: 10.1109/tpel.2026.3706282
Cited by: 1
References: 42

Fields of Study & Subjects

Silicon Carbide Semiconductor Technologies Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design

Publication details

Journal / source
IEEE Transactions on Power Electronics
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
41
Issue
11
Pages
19804–19814
Publication date
22 June 2026