Semi-Damascene FSAV: Via CD and Overlay Process Window Analysis

IEEE Transactions on Semiconductor Manufacturing 2026

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Authors: Yannick Hermans, G. Martí, Gilles Delie, Gayle Murdoch, A. Mingardi, Sandip Halder, Chen Wu, Seongho Park, Zsolt Tökei
DOI: 10.1109/tsm.2026.3659882
Cited by: 0
References: 10

Abstract

This study investigates the metal pitch 18 (MP18) via critical dimension (CD) and overlay process window (PW) for a two-metal-layer Ru semi-damascene integration scheme with a fully self-aligned via (FSAV) approach. The via CD and overlay PW was experimentally assessed from electrical tests probing the Kelvin via resistance yield and via-to-line leakage yield under a changing via CD and via y-overlay. Results show that >80% yield can be obtained for a 26.3+/-2.0 nm via litho CD and a +/- 4 nm via y-overlay PW for FSAV semi-damascene.

Fields of Study & Subjects

Copper Interconnects and Reliability Advancements in Photolithography Techniques Semiconductor materials and devices

Publication details

Journal / source
IEEE Transactions on Semiconductor Manufacturing
Volume
39
Issue
2
Pages
369–371
Publication date
2 February 2026