A Fully Zero-Current Turn-Off Topology for SiC Solid-State Circuit Breaker in Photovoltaic Storage and Charging DC Microgrids

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Authors: Dong He, Zhenzhong Wang, Wei Wang, Zheng Lan, Jinhui Zeng, Z. John Shen
Cited by: 1
References: 30

Abstract

Solid-state circuit breakers (SSCBs) enable rapid and reliable isolation of short-circuit faults in photovoltaic (PV) storage and charging DC microgrids. However, the main switch typically experiences high current and voltage stress during fault isolation, thus challenging the safe operation of the SSCB. Hence, a novel SSCB topology based on a normally-on silicon carbide (SiC) junction field-effect transistor (JFET) is proposed, which can achieve fully zero-current turn-off for both the main and auxiliary switches. During a short-circuit fault, an LC resonant circuit injects a reverse pulse current into the SiC JFET main switch to achieve zero-current turn-off, while a metal-oxide varistor (MOV) branch absorbs the fault current flowing through the SiC metal-oxide-semiconductor field-effect transistor (MOSFET) auxiliary switch, thereby facilitating the zero-current turn-off of the SiC MOSFET. Subsequently, the operating characteristics and design considerations for key components, including the inductor, capacitor, and MOV, are analyzed. Finally, a 375 V/63 A SSCB prototype is constructed and validated. Experimental results confirm that the proposed topology achieves zero-current turn-off for all the switches when interrupting a 260 A fault current, thereby significantly enhancing the interrupting performance and energy efficiency of the SSCB in PV storage and charging DC microgrids.

Fields of Study & Subjects

HVDC Systems and Fault Protection Silicon Carbide Semiconductor Technologies Electrical Fault Detection and Protection

Publication details

Journal / source
IEEE Transactions on Transportation Electrification
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
12
Issue
2
Pages
2656–2670
Publication date
12 January 2026