1550-Nm-Pumped InAs-Based Terahertz Modulator Integrated in a WR1.0 Waveguide

IEEE Transactions on Terahertz Science and Technology 2026

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Authors: Julien Guise, H. Ratovo, Fernando Gonzalez-Posada, Pierre Fehlen, Monique Thual, Jean–Claude Simon, Jeffrey L. Hesler, Theodore Reck, Laurent Cerutti, Jean‐Baptiste Rodriguez, P. Nouvel, Annick Pénarier
+3 more Emmanuel Centeno, T. Taliercio, S. Blin
DOI: 10.1109/tthz.2026.3652817
Cited by: 0

Abstract

We present a terahertz intensity modulator optically controlled at 1550 nm and integrated within a standard hollow-core rectangular waveguide operating in the 0.75-1.1 THz frequency range (WR1.0 standard). The relevant figures of merit for the component are presented; including insertion losses below 5 dB, average modulation depth of 70%, and a modulation bandwidth of 15 MHz. An analytical model relating the photogenerated carrier lifetime to the modulator bandwidth is presented.

Fields of Study & Subjects

Terahertz technology and applications Superconducting and THz Device Technology Advanced Photonic Communication Systems

Publication details

Journal / source
IEEE Transactions on Terahertz Science and Technology
Volume
16
Issue
4
Pages
406–416
Publication date
12 January 2026
Language
EN