Probing the Transport Dynamics of GaAs Under High Temperature Through Terahertz Spectroscopy

Characterizing the electrical transport in semiconductors under high-temperature conditions is crucial for advancing high-temperature electronics and photoelectronics. In this study, we utilize terahertz (THz) spectroscopy to investigate the electronic transport dynamics in GaAs at temperatures reaching up to 900$^{\circ }$C. Our results reveal a significant decrease in THz transmission above 400$^{\circ }$C, primarily driven by a surge in carrier density due to thermal activation. Furthermore, time-resolved THz spectroscopy (TRTS) uncovers the temperature evolution of transient THz complex photoconductivity, which agree well with Drude model across the entire temperature range examined. This work demonstrates the feasibility of employing THz spectroscopy as a diagnostic tool for semiconductors under high-temperature conditions, offering a valuable approach for characterizing the critical physical performances tailored for high-temperature electronic and photoelectronic applications.