A 6 × 6 Stitched Array of 320 GHz CMOS Active Pixel Detectors
Abstract
This document details the design and characterization of a 6x6 detector array fabricated with 65 nm CMOS, where the pixels in the array are stitched together with wirebonds as opposed to monolithic integration. Each pixel contains an on-chip loop antenna and baseband chopper amplifier with 32 dB gain. The design focuses on maintaining detector performance under array scaling and baseband integration. Measurement results of the chopper breakout, standalone pixel and array are presented, where the standalone pixel achieves an RV(voltage responsivity) of 120 kV/W and record NEP of 6 pW/√Hz with the baseband amplifier; and the mean array RVis 80 kV/W. The chip pixel area is 950 μm x 600 μm.
Fields of Study & Subjects
Superconducting and THz Device Technology
Radio Frequency Integrated Circuit Design
Terahertz technology and applications
Publication details
- Journal / source
- IEEE Transactions on Terahertz Science and Technology
- Volume
- 16
- Issue
- 5
- Pages
- 583–596
- Publication date
- 12 February 2026
- Language
- EN