A 28 nm 1.3 TFLOPS/mm 2 Floating-Point SRAM-Based CIM Macro With Asynchronous Normalization and Parallel Sorting Alignment for AI-Edge Chip
Abstract
State-of-the-art AI edge devices require floating-point (FP) multiply-accumulate (MAC) operations with high-energy efficiency and inference accuracy. FP computing in-memory (FP-CIM) has a broader range of applications compared to integer CIM. However, FP-CIM can incur greater power, delay, and area overheads than integer CIM due to the inherent complexity of FP computational flow. In this article, we introduce a new method for asynchronous exponent normalization and parallel mantissa alignment. This approach allows us to add exponents and find the maximum sum simultaneously. We also replace the traditional subtraction and shifting for mantissa alignment with a cross-structure maximum-finding method, enabling FP-CIM to be achieved with lower delay, area, and power overheads. The macro is designed in TSMC 28 nm process, with a memory size of 6 Kb, a layout area of 0.067 mm2, and an area efficiency of 1.3 TFLOPS/mm2. Simulation results show that the macro computational frequency and energy efficiency can reach 150 MHz and 12.8 TFLOPS/W, respectively, at 900 mV, while performing FP- MAC operations.
Fields of Study & Subjects
Low-power high-performance VLSI design
Numerical Methods and Algorithms
Parallel Computing and Optimization Techniques
Publication details
- Journal / source
- IEEE Transactions on Very Large Scale Integration (VLSI) Systems
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Volume
- 34
- Issue
- 3
- Pages
- 882–890
- Publication date
- 12 January 2026