A 48-Gb/s PAM-4 Transceiver With Transition Boosting and RLM Calibration for Next-Generation Memory Interface Testing

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Authors: Chan‐Ho Kye, Daeho Yun, Jeonghyeon Han, Minsu Park, Kahyun Kim, Kyungmin Baek, Eonhui Lee, Woo-Seok Choi, Jeong Deog-Kyoon, Jooyeol Rhee
Cited by: 2
References: 16

Abstract

As the demand for high-speed memory interfaces continues to grow, the need for effective testing methodologies becomes increasingly critical. Traditional automatic test equipment (ATE) systems are limited in their capability to test advanced signaling methods such as pulse amplitude modulation-4 (PAM-4) due to their reliance on non-return-to-zero (NRZ) signaling. This article presents a PAM-4 transceiver designed to bridge the gap between the tester and the memory, boosting the PAM-4 testing data rate up to 48 Gb/s using existing NRZ-based ATE. The proposed work provides enhanced transition slope and ratio level mismatch (RLM) control through precise gate voltage adjustment, resulting in improved test accuracy. The prototype was fabricated in 40-nm CMOS technology and occupies an active area of 2.34 mm2. The proposed work operates at 48 Gb/s/pin, demonstrating an energy efficiency of 1.85 pJ/bit in write mode and 2.97 pJ/bit in read mode for the PAM-4 test, respectively.

Fields of Study & Subjects

Advancements in PLL and VCO Technologies VLSI and Analog Circuit Testing Low-power high-performance VLSI design

Publication details

Journal / source
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Volume
34
Issue
3
Pages
981–990
Publication date
12 January 2026
Language
영어