A Dual-Band Fully Integrated CMOS Ambient RFEH Rectifier With Dual-Loss Mitigation Technique Scoring >15-dB Dynamic Range

This article presents a fully integrated CMOS rectifier with dual-band (0.9/1.8 GHz) harvesting capability and wide input power ($P_{\mathbf {IN}}$) operational range, targeting on-chip ambient RF energy harvesting (AREFH) applications. The proposed work enhances the performance by addressing two primary PCE’s dynamic range (PDR) limiting loss mechanisms: reverse current loss ($P_{\mathbf {LO-REV}}$) and impedance mismatch reflection loss ($P_{\mathbf {LO-REFL}}$).$P_{\mathbf {LO-REV}}$is mitigated using a six-/nine-stage extension technique. At the same time,$P_{\mathbf {LO-REFL}}$is reduced through a fully integrated dual-domain impedance matching network (IMN) employing series and shunt resonant techniques. Implemented in 65-nm CMOS, the proposed prototype occupies an active area of 0.23 mm${}^{\mathbf {^{2}}}$and was experimentally validated via on-wafer probing. Measurement results demonstrate the peak power conversion efficiency (PCE) of 43.6% at 0.9 GHz and 47.1% at 1.8 GHz under a 100-k$\Omega $load. Moreover, the proposed rectifier achieves a 15-dB PDR at both harvesting frequencies, representing the widest PDR among prior single-band and multiband fully on-chip works, thereby highlighting its competitiveness for practical ARFEH applications.