Workload-Derived AC Bias Temperature Instability and Mechanism Contributions in BEOL Oxide Channel DRAM Access Transistors

2026 IEEE/JSAP Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 2026

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Authors: Hyun Jae Lee, Faaiq Waqar, Hyeonwoo Park, Chengyang Zhang, Jaewon Shin, Eknath Sarkar, Hwan Kim, Changik Im, Min Ji Hong, Daewon Ha, Asif I. Khan, Shimeng Yu
+1 more Suman Datta
DOI: 10.1109/vlsitechnologyandcir65830.2026.11577281
Cited by: 1
References: 5

Fields of Study & Subjects

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
2026 IEEE/JSAP Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Publisher
IEEE
Pages
1–3
Publication date
14 June 2026