Innovative Performance of 6th Generation 11nm DRAM Cell Transistor for HBM4 Application

2026 IEEE/JSAP Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) 2026

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Authors: Shinwoo Jeong, Jiuk Jang, Chulmin Kim, Yuseok Choi, Youngwoo Son, Dongsoo Woo, Hoin Ryu, Kyosuk Chae, B C Lee, Sangjoon Hwang
DOI: 10.1109/vlsitechnologyandcir65830.2026.11577343
Cited by: 1
References: 7

Fields of Study & Subjects

Advancements in Semiconductor Devices and Circuit Design Low-power high-performance VLSI design Ferroelectric and Negative Capacitance Devices

Publication details

Journal / source
2026 IEEE/JSAP Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Publisher
IEEE
Pages
1–3
Publication date
14 June 2026