Electroless Copper Metallization on Glass: Challenges, Strategies, and Applications for Next‐Generation Electronics Packaging

ABSTRACT Electroless copper (Cu) deposition has become a viable and scalable metallization deposition method for through‐glass vias (TGVs) and glass‐based interposers. The advancements in electroless Cu deposition processes that address surface activation, adhesion mechanisms, and homogeneous metallization are highlighted. Metallization techniques that improve nucleation, stress management, and interface stability are shown by the activation method and comparisons with Pd‐free catalysts. Research on microstructure characterization and modeling provides an explicit relationship among bath composition, deposition rate, and mechanical integrity of the Cu layer. Overall, the electroless deposition of Cu provides several benefits, such as low cost, good conformality, and wide compatibility of substrates, but it still has limitations with bath stability, impurity management, and ecological sustainability. Future directions for attaining high‐performance, reliable metallization in next‐generation semiconductor packaging include stress‐engineered interfaces, optimization of green chemistry parameters, and activation with nanomaterials.