Cathodoluminescence of β-Ga2O3:Fe (2¯01) irradiated with boron ions

Gallium oxide (Ga2O3) is one of the most promising wide-bandgap semiconductors for the development of next-generation electronic and optoelectronic devices. Doping of Ga2O3 with various impurities via ion implantation is widely employed in the fabrication of such devices. This requires a comprehensive investigation of the influence of implantation conditions on defect formation, the behavior of defects and impurities before and after annealing, and the resulting properties of the ion-doped layers. Boron, as a dopant, is of particular interest due to its minimal atomic mass and smallest ionic radius among the elements isovalent with gallium. In this study, the cathodoluminescence spectra of β-Ga2O3Fe single crystals with a surface orientation of (2¯01), subjected to boron ion implantation (both as-implanted and after subsequent annealing), have been studied. Known luminescence lines associated with native defects have been identified, along with certain features specific to boron, such as a pronounced separation of the green emission line and a significant reduction of the UV line at higher irradiation fluences. The discussion of these observations is conducted in the context of previously established data.