Development of wide-bandgap avalanche photodetectors for the ultraviolet spectral region

Advanced Photonics 2026 Open access

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Authors: Hoon Jeong, Zhiyu Xu, Davide Balzerani, Alexandra Dolgashev, Theeradetch Detchprohm, Paul Doug Yoder, Adam Nepomuk Otte, Russell D. Dupuis
DOI: 10.1117/1.ap.8.2.024001
Cited by: 1

Abstract

Recent advances in the development of ultraviolet avalanche p-i-n photodiodes composed of the III-N and SiC compound semiconductors have established that these materials can provide distinct advantages over the current Si-CMOS-based photodetector technology. We review the early development of semiconductor photodetectors and the current understanding and state-of-the-art for the III-N and SiC photodetectors. Particular emphasis is devoted to considering the potential use of these materials for single-photon avalanche ultraviolet photodetectors operating in Geiger-mode.

Fields of Study & Subjects

Advanced Semiconductor Detectors and Materials Radiation Detection and Scintillator Technologies Ga2O3 and related materials

Publication details

Journal / source
Advanced Photonics
Publisher
SPIE-Intl Soc Optical Eng
Volume
8
Issue
02
Pages
1-30
Publication date
7 April 2026