336 Gbps silicon photodetector with a low-loss fan-out wafer-level heterogeneous redistribution layer

Advanced Photonics Nexus 2026 Open access

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Authors: Aoxue Wang, Yinshan Huang, Yaotian Zhao, Xu Wang, Jun Li, Mingxuan Li, Zongheng Weng, Fangchen Hu, Yiran Wei, Xiao Hu, Xuhan Guo, L T Zhou
+2 more Haiwen Cai, Wei Chu
DOI: 10.1117/1.apn.5.3.036017
Cited by: 1

Abstract

We demonstrate a 336 Gbps reconfigurable silicon Ge–Si photodetector (PD) based on low-loss fan-out wafer-level packaging (FOWLP). Silicon-based micro-electro-mechanical system (MEMS) photosensitive composite film is employed to enable seamless integration of electronic integrated circuits and photonic integrated circuits. This approach utilizes benzocyclobutene-based transmission lines, achieving a high interconnect density of >102/mm and low insertion loss of

Fields of Study & Subjects

Photonic and Optical Devices Semiconductor Quantum Structures and Devices Optical Network Technologies

Publication details

Journal / source
Advanced Photonics Nexus
Publisher
SPIE-Intl Soc Optical Eng
Volume
5
Issue
03
Pages
1-8
Publication date
12 May 2026