X-ray metrology for advanced semiconductor manufacturing of next-generation logic devices

Background: Advanced semiconductor logic nodes have shifted toward gate-all-around (GAA) architectures, such as Nanosheet, Forksheet, and complementary field-effect transistor devices. This shift has imposed more stringent measurement requirements at the front-end-of-line process stages. As the GAA architecture has been advanced to improve device performance, power efficiency and reduce device dimensions, the complexity in structural design and material integration is observed. A fundamental limit in structural characterization for GAA devices has been reached by conventional metrology, primarily due to the intricate 3D, high-aspect-ratio vertical stacked channels with buried nanoscale features.Aim: To address these complexities and support process control, several metrologies are reviewed, with an emphasis on X-ray metrology and the inclusion of other relevant metrologies.Review Approach: Recent developments in metrology are discussed in detail. Analysis is focused on measurement configurations, in-line applicability, and advancements aligned with the demands of next-generation logic nodes.Conclusion: The correspondence between X-ray metrology advancements and architecture-driven requirements is evaluated in this review. X-ray metrology developments are assessed for the potential to facilitate the characterization of 3D nanoscale features within future logic device fabrication.