Advanced III-N based electronic and optoelectronic devices fabricated by MOCVD

Light-Emitting Devices, Materials, and Applications 2026

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Authors: M. Heuken
DOI: 10.1117/12.3077300
Cited by: 0

Fields of Study & Subjects

GaN-based semiconductor devices and materials Semiconductor materials and devices Silicon Carbide Semiconductor Technologies

Publication details

Journal / source
Light-Emitting Devices, Materials, and Applications
Pages
20–20
Publication date
5 March 2026
Language
EN