Formation and stabilization of Ga vacancies in β-Ga2O3: effects of Al-alloying, Si-doping, and proton irradiation

Oxide-based Materials and Devices 2026

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Authors: Iuliia Zhelezova, Ilja Makkonen, Zbigniew Galazka, Filip Tuomisto
DOI: 10.1117/12.3077872
Cited by: 0

Fields of Study & Subjects

Ga2O3 and related materials Semiconductor materials and devices Fusion materials and technologies

Publication details

Journal / source
Oxide-based Materials and Devices
Pages
22–22
Publication date
5 March 2026
Language
EN