Hydride vapor phase epitaxy for 6-inch GaN-on-GaN wafer production

Light-Emitting Devices, Materials, and Applications 2026

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Authors: Shota Kaneki, Taichiro Konno, Hisashi Mori, Hajime Fujikura, Daiki Iwata, Tetsuji Fujimoto, Takashi Sato
DOI: 10.1117/12.3078185
Cited by: 0

Fields of Study & Subjects

GaN-based semiconductor devices and materials Silicon Carbide Semiconductor Technologies Semiconductor materials and devices

Publication details

Journal / source
Light-Emitting Devices, Materials, and Applications
Pages
8–8
Publication date
5 March 2026
Language
EN