Study on the characteristics of Micro-LEDs by ion implantation

Gallium Nitride Materials and Devices 2026

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Authors: Ray‐Hua Horng
DOI: 10.1117/12.3078553
Cited by: 0

Fields of Study & Subjects

GaN-based semiconductor devices and materials Ion-surface interactions and analysis Semiconductor Quantum Structures and Devices

Publication details

Journal / source
Gallium Nitride Materials and Devices
Pages
54–54
Publication date
5 March 2026
Language
EN