Characteristics of AlGaInN prepared by pulsed sputtering

We have discovered that high-quality AlGaInN thin films can be grown using the pulse sputtering method. Various optical and electronic devices have already been manufactured using this method and are operating successfully. The most striking feature of this method is its doping capability. In conventional MOCVD methods, donors and acceptors can only be introduced up to a limited concentration due to thermodynamic constraints. However, in non-equilibrium sputtering growth, degenerate AlGaInN thin films can be easily synthesized. We have achieved the lowest resistivity and highest optical bandgap values for these materials to date. We have also achieved the lowest contact resistance values. These facts are extremely important for improving the performance of high-current devices such next generation lasers and power electronics.