Efficiency of InGaN/GaN quantum wells: comparative study of dislocation and point defect related non-radiative recombination

Light-Emitting Devices, Materials, and Applications 2026

View at publisher
Authors: Anna Toschi, Anna Schwab, Yao Chen, Jean-François Carlin, R. Butté, N. Grandjean
DOI: 10.1117/12.3078714
Cited by: 0

Fields of Study & Subjects

GaN-based semiconductor devices and materials Semiconductor Quantum Structures and Devices solar cell performance optimization

Publication details

Journal / source
Light-Emitting Devices, Materials, and Applications
Pages
22–22
Publication date
5 March 2026
Language
EN