Alternative conductivity control in nitrides: polarization doping and tunnel junctions
Abstract
In this talk, we show our recent results of MOVPE-grown polarization-doped AlGaN with high AlN mole fractions and GaInN tunnel junctions with low InN mole fractions. A hole concentration of more than 2e18 cm-3 was obtained in graded AlGaN layers without Mg doping on AlN templates. In addition, a resistivity of less than 2e-4 Ωcm2 (at 5kA/cm2) was obtained in GaInN tunnel junctions on GaN templates. These alternative electrical conductivity control methods open up for high-performance nitride-based optoelectronics.
Fields of Study & Subjects
GaN-based semiconductor devices and materials
Silicon Carbide Semiconductor Technologies
Semiconductor Quantum Structures and Devices
Publication details
- Journal / source
- Gallium Nitride Materials and Devices
- Pages
- 11–11
- Publication date
- 5 March 2026
- Language
- EN